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The Impact of Memory Change on Everyday Life Among Older Adults: Association with Cognition and Self-Reported Memory
- Komal T. Shaikh, Erica L. Tatham, Susan Vandermorris, Theone Paterson, Kathryn Stokes, Morris Freedman, Brian Levine, Jill B. Rich, Angela K. Troyer
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- Journal:
- Journal of the International Neuropsychological Society / Volume 27 / Issue 9 / October 2021
- Published online by Cambridge University Press:
- 14 January 2021, pp. 896-904
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Objectives:
Many older adults experience memory changes that can have a meaningful impact on their everyday lives, such as restrictions to lifestyle activities and negative emotions. Older adults also report a variety of positive coping responses that help them manage these changes. The purpose of this study was to determine how objective cognitive performance and self-reported memory are related to the everyday impact of memory change.
Methods:We examined these associations in a sample of 94 older adults (age 60–89, 52% female) along a cognitive ability continuum from normal cognition to mild cognitive impairment.
Results:Correlational analyses revealed that greater restrictions to lifestyle activities (|rs| = .36–.66), more negative emotion associated with memory change (|rs| = .27–.76), and an overall greater burden of memory change on everyday living (|rs| = .28–.61) were associated with poorer objective memory performance and lower self-reported memory ability and satisfaction. Performance on objective measures of executive attention was unrelated to the impact of memory change. Self-reported strategy use was positively related to positive coping with memory change (|r| = .26), but self-reported strategy use was associated with more negative emotions regarding memory change (|r| = .23).
Conclusions:Given the prevalence of memory complaints among older adults, it is important to understand the experience of memory change and its impact on everyday functioning in order to develop services that target the specific needs of this population.
Unsteady flows induced by a point source or sink in a fluid of finite depth
- T. E. STOKES, G. C. HOCKING, L. K. FORBES
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- Journal:
- European Journal of Applied Mathematics / Volume 28 / Issue 3 / June 2017
- Published online by Cambridge University Press:
- 22 July 2016, pp. 357-379
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The time-varying flow in which fluid is withdrawn from or added to a reservoir of infinite or arbitrary finite depth through a point sink or source of variable strength beneath a free surface is considered. Backed up by some analytic work, a numerical method is used, and the results are compared with previous work on steady and unsteady flows. In the case of withdrawal for an impulsively started flow, it is found that the critical flow rate increases with reservoir depth, although it changes little as the depth increases beyond double the sink submergence depth. The largest flow rate at which steady solutions can evolve in source flows follows a similar pattern although at a considerably higher value. Simulations indicate that some of the previously calculated steady state solutions at higher flow rates may be unstable, if they exist at all.
THE EFFECT OF SURFACE TENSION ON FREE-SURFACE FLOW INDUCED BY A POINT SINK
- G. C. HOCKING, H. H. N. NGUYEN, L. K. FORBES, T. E. STOKES
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- Journal:
- The ANZIAM Journal / Volume 57 / Issue 4 / April 2016
- Published online by Cambridge University Press:
- 18 March 2016, pp. 417-428
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The steady, axisymmetric flow induced by a point sink (or source) submerged in an inviscid fluid of infinite depth is computed and the resulting deformation of the free surface is obtained. The effect of surface tension on the free surface is determined and is the new component of this work. The maximum Froude numbers at which steady solutions exist are computed. It is found that the determining factor in reaching the critical flow changes as more surface tension is included. If there is zero or a very small amount of surface tension, the limiting factor appears to be the formation of small wavelets on the free surface; but, as the surface tension increases, this is replaced by a tendency for the lowest point on the free surface to descend sharply as the Froude number is increased.
A NOTE ON STEADY FLOW INTO A SUBMERGED POINT SINK
- G. C. HOCKING, L. K. FORBES, T. E. STOKES
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- Journal:
- The ANZIAM Journal / Volume 56 / Issue 2 / October 2014
- Published online by Cambridge University Press:
- 14 October 2014, pp. 150-159
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The steady, axisymmetric flow induced by a point sink (or source) submerged in an unbounded inviscid fluid is computed. The resulting deformation of the free surface is obtained, and a limit of steady solutions is found that is quite different to those obtained in past work. More accurate solutions indicate that the old limiting flow rate was too high and, in fact, the breakdown of steady solutions at a lower flow rate is characterized by the appearance of spurious wavelets at the free surface.
Steady free surface flows induced by a submerged ring source or sink
- T. E. Stokes, G. C. Hocking, L. K. Forbes
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- Journal:
- Journal of Fluid Mechanics / Volume 694 / 10 March 2012
- Published online by Cambridge University Press:
- 24 January 2012, pp. 352-370
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The steady axisymmetric flow induced by a ring sink (or source) submerged in an unbounded inviscid fluid is computed and the resulting deformation of the free surface is obtained. Solutions are obtained analytically in the limit of small Froude number (and hence small surface deformation) and numerically for the full nonlinear problem. The small Froude number solutions are found to have the property that if the non-dimensional radius of the ring sink is less than , there is a central stagnation point on the surface surrounded by a dip which rises to the stagnation level in the far distance. However, as the radius of the ring sink increases beyond , a surface stagnation ring forms and moves outward as the ring sink radius increases. It is also shown that as the radius of the sink increases, the solutions in the vicinity of the ring sink/source change continuously from those due to a point sink/source () to those due to a line sink/source (). These properties are confirmed by the numerical solutions to the full nonlinear equations for finite Froude numbers. At small values of the Froude number and sink or source radius, the nonlinear solutions look like the approximate solutions, but as the flow rate increases a limiting maximum Froude number solution with a secondary stagnation ring is obtained. At large values of sink or source radius, however, this ring does not form and there is no obvious physical reason for the limit on solutions. The maximum Froude numbers at which steady solutions exist for each radius are computed.
Contributors
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- By Rose Teteki Abbey, K. C. Abraham, David Tuesday Adamo, LeRoy H. Aden, Efrain Agosto, Victor Aguilan, Gillian T. W. Ahlgren, Charanjit Kaur AjitSingh, Dorothy B E A Akoto, Giuseppe Alberigo, Daniel E. Albrecht, Ruth Albrecht, Daniel O. Aleshire, Urs Altermatt, Anand Amaladass, Michael Amaladoss, James N. Amanze, Lesley G. Anderson, Thomas C. Anderson, Victor Anderson, Hope S. Antone, María Pilar Aquino, Paula Arai, Victorio Araya Guillén, S. Wesley Ariarajah, Ellen T. Armour, Brett Gregory Armstrong, Atsuhiro Asano, Naim Stifan Ateek, Mahmoud Ayoub, John Alembillah Azumah, Mercedes L. García Bachmann, Irena Backus, J. Wayne Baker, Mieke Bal, Lewis V. Baldwin, William Barbieri, António Barbosa da Silva, David Basinger, Bolaji Olukemi Bateye, Oswald Bayer, Daniel H. Bays, Rosalie Beck, Nancy Elizabeth Bedford, Guy-Thomas Bedouelle, Chorbishop Seely Beggiani, Wolfgang Behringer, Christopher M. Bellitto, Byard Bennett, Harold V. Bennett, Teresa Berger, Miguel A. Bernad, Henley Bernard, Alan E. Bernstein, Jon L. Berquist, Johannes Beutler, Ana María Bidegain, Matthew P. Binkewicz, Jennifer Bird, Joseph Blenkinsopp, Dmytro Bondarenko, Paulo Bonfatti, Riet en Pim Bons-Storm, Jessica A. Boon, Marcus J. Borg, Mark Bosco, Peter C. Bouteneff, François Bovon, William D. Bowman, Paul S. Boyer, David Brakke, Richard E. Brantley, Marcus Braybrooke, Ian Breward, Ênio José da Costa Brito, Jewel Spears Brooker, Johannes Brosseder, Nicholas Canfield Read Brown, Robert F. Brown, Pamela K. Brubaker, Walter Brueggemann, Bishop Colin O. Buchanan, Stanley M. Burgess, Amy Nelson Burnett, J. Patout Burns, David B. Burrell, David Buttrick, James P. Byrd, Lavinia Byrne, Gerado Caetano, Marcos Caldas, Alkiviadis Calivas, William J. Callahan, Salvatore Calomino, Euan K. Cameron, William S. Campbell, Marcelo Ayres Camurça, Daniel F. Caner, Paul E. Capetz, Carlos F. Cardoza-Orlandi, Patrick W. Carey, Barbara Carvill, Hal Cauthron, Subhadra Mitra Channa, Mark D. Chapman, James H. Charlesworth, Kenneth R. Chase, Chen Zemin, Luciano Chianeque, Philip Chia Phin Yin, Francisca H. Chimhanda, Daniel Chiquete, John T. Chirban, Soobin Choi, Robert Choquette, Mita Choudhury, Gerald Christianson, John Chryssavgis, Sejong Chun, Esther Chung-Kim, Charles M. A. Clark, Elizabeth A. Clark, Sathianathan Clarke, Fred Cloud, John B. Cobb, W. Owen Cole, John A Coleman, John J. Collins, Sylvia Collins-Mayo, Paul K. Conkin, Beth A. Conklin, Sean Connolly, Demetrios J. Constantelos, Michael A. Conway, Paula M. Cooey, Austin Cooper, Michael L. Cooper-White, Pamela Cooper-White, L. William Countryman, Sérgio Coutinho, Pamela Couture, Shannon Craigo-Snell, James L. Crenshaw, David Crowner, Humberto Horacio Cucchetti, Lawrence S. Cunningham, Elizabeth Mason Currier, Emmanuel Cutrone, Mary L. Daniel, David D. Daniels, Robert Darden, Rolf Darge, Isaiah Dau, Jeffry C. Davis, Jane Dawson, Valentin Dedji, John W. de Gruchy, Paul DeHart, Wendy J. 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Flowers, Carole Fontaine, David Ford, Mary Ford, Stephanie A. Ford, Jim Forest, William Franke, Robert M. Franklin, Ruth Franzén, Edward H. Friedman, Samuel Frouisou, Lorelei F. Fuchs, Jojo M. Fung, Inger Furseth, Richard R. Gaillardetz, Brandon Gallaher, China Galland, Mark Galli, Ismael García, Tharscisse Gatwa, Jean-Marie Gaudeul, Luis María Gavilanes del Castillo, Pavel L. Gavrilyuk, Volney P. Gay, Metropolitan Athanasios Geevargis, Kondothra M. George, Mary Gerhart, Simon Gikandi, Maurice Gilbert, Michael J. Gillgannon, Verónica Giménez Beliveau, Terryl Givens, Beth Glazier-McDonald, Philip Gleason, Menghun Goh, Brian Golding, Bishop Hilario M. Gomez, Michelle A. Gonzalez, Donald K. Gorrell, Roy Gottfried, Tamara Grdzelidze, Joel B. Green, Niels Henrik Gregersen, Cristina Grenholm, Herbert Griffiths, Eric W. Gritsch, Erich S. Gruen, Christoffer H. Grundmann, Paul H. Gundani, Jon P. Gunnemann, Petre Guran, Vidar L. Haanes, Jeremiah M. 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Yee, Viktor Yelensky, Yeo Khiok-Khng, Gustav K. K. Yeung, Angela Yiu, Amos Yong, Yong Ting Jin, You Bin, Youhanna Nessim Youssef, Eliana Yunes, Robert Michael Zaller, Valarie H. Ziegler, Barbara Brown Zikmund, Joyce Ann Zimmerman, Aurora Zlotnik, Zhuo Xinping
- Edited by Daniel Patte, Vanderbilt University, Tennessee
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- The Cambridge Dictionary of Christianity
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- 05 August 2012
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- 20 September 2010, pp xi-xliv
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Unsteady flow induced by a withdrawal point beneath a free surface
- T. E. Stokes, G. C. Hocking, L. K. Forbes
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- Journal:
- The ANZIAM Journal / Volume 47 / Issue 2 / October 2005
- Published online by Cambridge University Press:
- 17 February 2009, pp. 185-202
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The unsteady axisymmetric withdrawal from a fluid with a free surface through a point sink is considered. Results both with and without surface tension are included and placed in context with previous work. The results indicate that there are two critical values of withdrawal rate at which the surface is drawn directly into the outlet, one after flow initiation and the other after the flow has been established. It is shown that the larger of these values corresponds to the point at which steady solutions no longer exist.
On the flow between a rotating and a stationary disk
- G. L. Mellor, P. J. Chapple, V. K. Stokes
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- Journal of Fluid Mechanics / Volume 31 / Issue 1 / 8 January 1968
- Published online by Cambridge University Press:
- 28 March 2006, pp. 95-112
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The analysis and experiments in this paper are restricted to the flow between two coaxial, infinite disks, one rotating and one stationary. The results of numerical calculations show that many solutions can exist for a given Reynolds number Ωl2/v (Ω is the angular velocity of the rotating disk and I is the spacing between the two disks). Out of a greater number of possible solutions, three solution branches have been identified; the branches correspond to one-, two- and three-flow cells in the meridional plane.
The one-cell branch has been accorded detailed treatment. Within this branch there are two subbranches. The first, now well documented in the literature, includes solutions from zero to infinite Reynolds number. The latter limiting case is characterized by an inward-flowing boundary layer on the stationary disk and an outward-flowing boundary layer on the rotating disk. In between is a core flow rotating with a constant angular velocity. The second sub-branch of the single-cell flows, apparently unknown heretofore, begins with an infinite Reynolds number, decreases to a minimum and then increases to an infinite Reynolds number again. The first infinite Reynolds number limit again corresponds to two boundary-layer flows separated by a core flow with constantangular velocity opposite in direction to the angular velocity of the rotating disk. The second limiting case of infinite Reynolds number is the free-disk solution of von Kármán (1921). Asymptotic solutions have been obtained which more fully describe the nature of this flow as the Reynolds number increases.
The second part of the paper presents experimental measurements corresponding to the Reynolds number range 0–100. Profiles were measured with a hot-wire anemometer. The measurements are in agreement with the first, one-cell branch of solutions. A semi-quantitative evaluation of edge effects is obtained.
Pressure Effect of Seebeck Coeffcient for Zinc Doped Tin Clathrates
- F. Chen, K. L. Stokes, G. S. Nolas
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- Journal:
- MRS Online Proceedings Library Archive / Volume 691 / 2001
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- 21 March 2011, G4.4
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- 2001
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We measured the temperature dependence of electrical resistance (R) and thermopower (S) of Cs8Zn4Sn42 under high pressure up to 1.2 GPa. Both R and ∣S∣ at room temperature increased with pressure. We observed gap widening, irreversible ∣S∣ increasing under high pressure, which were similar to the behaviors of Cs8Sn44. However, the relaxation e.ect of R for Cs8Zn4Sn42 was negligible in contrast with that of Cs8Sn44. We found that the power factor S2σ (σ: electrical conductivity) near room temperature decreased linearly with pressure. The results suggest that the defects in different forms played an important role in transport properties for tin clathrates under high pressure.
Photomodulation spectroscopy of thin Ge films formed by molecular beam epitaxy on Si (111)
- K. L. Stoke, P. Deelman, H. S. Kang, L. J. Schowalter, P. D. Persans
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- Journal:
- MRS Online Proceedings Library Archive / Volume 417 / 1995
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- 10 February 2011, 165
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- 1995
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The photomodulated transmission spectrum of a single Ge layer grown at 500°C on the Si(1 11) surface by molecular beam epitaxy is reported. The nominal Ge layer thickness was 50 nm. The modulation spectrum of thicker layers is dominated by a threelobed structure centered 70–80 meV above the bulk direct band edge. This structure is ascribed to excitation-induced broadening of the lowest direct exciton.
Nanocrystallites of Si Embedded in CaF2 by Molecular Beamepitaxy (MBE)
- A. P. Taylor, K. Stokes, Z. C. Wu, P. D. Persans, L. J. Schowalter, F. K. LeGoues
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- Journal:
- MRS Online Proceedings Library Archive / Volume 283 / 1992
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- 28 February 2011, 71
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- 1992
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Thin films of CaF2 containing layers of Si nanocrystals were grown epitaxially on Si(111) substrates by MBE. When Si is deposited epitaxially on CaF2 it forms islands and, by choosing appropriate growth conditions, a composite of Si nanocrystals embedded in a CaF2 host crystal is obtained which we have observed with TEM. We varied the effective Si concentration in the composite region from 1% to 25%. The CaF2 could be grown with high crystal quality as demonstrated by ion channeling results which gave Ca xmin's as low as 4.7%. Raman spectra of the CaF2 containing Si nanocrystallites showed significant shifts toward lower energies. EUipsometry measurements were performed on a number of samples over a range of effective Si concentrations and Maxwell-Garnett effective medium theory was used to fit the data. A key technological advantage to this approach is that the epitaxial Si/CaF2 composite material is readily integrable into VLSI processing.
X-Ray Diffraction Studies of Zwitterionic Associating Polymers
- Y. Shen, C. R. Safinya, L. Fetters, M. Adam, T. Witten, K. S. Liang, R. Chance, J. Stokes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 177 / 1989
- Published online by Cambridge University Press:
- 21 February 2011, 27
- Print publication:
- 1989
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We have carried out x-ray scattering studies in melts of a series of linear polyisoprenes with highly polar sulfo-zwitterion groups at one end. The zwitterion end groups cause aggregation in good solvents for polyisoprene. The aggregation number depends strongly on the molecular weight of the polyisoprene tails and on the polarity of the solvent. Molecular mechanics simulations of the interactions between the zwitterion head groups suggest tubelike or diskline structures for the aggregates. Spherical structures are not energetically favorable. High resolution synchrotron x-ray scattering studies were carried out for six different (chain) molecular weights between 2000 and 23,000. For low molecular weights (between 2000 and 4000) a tubular structure is found with the tubes organized on a well-defined, two-dimensional triangular lattice with very large domain sizes >2000Å. A structural phase transition to a cubic (bcc) phase with long range order is observed to occur for molecular weights >10,000. The lattice spacing increase over the molecular range was between 95Å (for MW-2000) and 206Å (for MW-23,000). For the high molecular weight melts, annealing transforms the structure from (bcc) (with long range order) to an (fcc) disordered structure with short range order.
Morphology of Silicon Islands Grown By Selective Epitaxy Over Silicon Dioxide
- S.T. Liu, K. Newstrom, M. Hibbs-Brenner, R.J. Stokes, B. Hoefflinger, G. Neudeck, R. Zingg, L. Bousse, J.D. Meindl
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- Journal:
- MRS Online Proceedings Library Archive / Volume 53 / 1985
- Published online by Cambridge University Press:
- 28 February 2011, 169
- Print publication:
- 1985
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We studied the selective epitaxial deposition of silicon in patterned oxide-free regions over silicon dioxide in a RF-heated, commercial, reduced-pressure epitaxial reactor, using SiH2Cl2/HCl/H2 gas system. We found that etching into silicon occurs at the high end of HCl content, and nucleation on the silicon dioxide at the low end of HCl content. The selective epitaxial growth of silicon islands is obtained in between.